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antimony tin oxide is one of the most versatile nanomaterials with multiple applications, including solar energy storage, specialized electrodes and transparent UV protection. It also offers good IR shielding, magnetic properties and chemical resistance, making it an excellent additive for a wide range of applications.
Synthesis & Characterization
In order to produce high quality antimony tin oxide (ATO) nanoparticles, there are several important parameters that must be carefully controlled. These include particle size crystallinity, narrow particle size distribution and dispersibility in a particular solvent.
XPS and WDX Studies of SnO2 films: Stochastic Segeration, Valence-Band Density of States and Surface Electron Accumulation
In epitaxial SnO2, a stable band gap is formed at the G point by a characteristic free electron in the Sn-O bond. This is a 0Sn state that is compensated by a 0-O and 1-O states at the CBM.
The mobility of SnO2 is a product of valence-band density of states and surface electron accumulation. During epitaxial growth, valence-band density of states can change under Sn-rich/O-poor conditions or Sn-poor/O-rich conditions depending on the concentrations and type of dopant used.
In order to synthesize SnO2 films with superior conductivity, a highly scalable synthetic route is required. We report a method that uses a simple ammonia-diffusion co-precipitation technique. In the process, SnO2 n-dopant is added to the precursor solution by means of polymer-strengthening agents to achieve dopant loadings in the range of 2-4 at%. The resultant ATO thin films have excellent electrical properties and show a significant increase in conductivity with increasing doping.