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Copper sulfide is an important metal in the electronics industry. It has a wide range of applications in semiconductor devices and photo optics.
Several chemical, surface and structural properties are important in the design of advanced semiconductor devices. The composition, morphology and valence states of the Cu sulfide film deposited on the surface of the device should be carefully controlled to maximize the performance of the electronic circuitry.
Ex situ XRD, SEM and XPS were used to study the surface morphology of different copper sulfide films. The XRD patterns were recorded using CuKa radiation on a Rigaku RINT 2500 VHF x-ray diffractometer operated at 40kV and 450mA (JEOL JSM-6500F).
Structural studies of HDA-capped copper sulfide nanocrystals were performed by spectroscopy and electron microscopy. The spectral features of these nanocrystals showed an emission shift due to quantum size effects.
Sulfurized copper sulfide is synthesized by solid-state reaction of stoichiometric amounts of pure copper and sulfur. Stoichiometric CuS is the most stable phase in this process and is preferred for the synthesis of high-quality semiconductors.
Electrochemical X-ray absorption spectroscopy was used to examine the reversible and thermodynamic properties of in situ-formed Cu-S NSs at -1.3 V vs. Hg/HgO in comparison to Cu foil.
The reversible electrical conductivity of the Cu-S NSs in the near-surface region was significantly higher than that of the corresponding Cu foil at -1.3 V vs. HCl, suggesting the existence of an active sulfide-doped sulfur layer that played a critical role in the control of the selectivity of alkenes.
