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Nano silicon research is undergoing new developments
(1) Change the amount of silicon-rich and annealing temperatures to control the size of silicon nanocrystals. The critical temperature required for the formation of silicon nanocrystals has been suggested by the literature as being 1000oC. We have proved this through experiments. After annealing at 900oC, the high-resolution electron photo of silicon-rich silicone oxide has a silicon content of around 30%. It is obvious that silicon nanocrystals exist.
(2) First time observation of the electroluminescence in Au/(Ge/SiO2) superlattice/p -Si structure. High-resolution electron micrograph showing a four-period Ge/SiO2 supra lattice. The bright-line shows SiO2 having a thickness of 2.0nm. The Ge layer has a thickness at 2.4nm.
(3) The nanoSiO2/Si/SiO2 single-potential high-potential sandwich structure was created on a silicon substrate. It was achieved by magnetron-sputtering technology. This enabled visible electroluminescence to be realized for the first-time. It was found that the intensity and peak positions of electroluminescence oscillate synchroeously with changes in the thickness (W), of Nano-silicon. Further research and analysis have proven that the oscillation time is 1/2 of the de Broglie wavelength. This is explained by our electroluminescence theory.
(4) Er electroluminescence (with a wavelength 1.54mm) was first realized using the SiO2Si:Er film grown by magnetron-sputtering.
(5) First time, a UV-violet luminescence of 360nm at a low threshold voltage was achieved in heat-treated natural silicon oxide/pSi. It is the longest wavelength known to be produced by silicon-based ultravioletescence.
The applications prospects for Nano silicon
We have developed more than 10 types of silicon/siliconoxide nanostructures and realized the photoluminescence within the main wavelength bands (including 1.54 mm and 1.62 mm from the near ultraviolet to the near infrared). Also, we proposed widely supported photoluminescence & electroluminescence models that provide the foundation for silicon-based optoelectronic Integration. It is of significant scientific significance and offers great potential for future applications.
(aka. Technology Co. Ltd. (aka. Our Nano silicon is high in purity, fine particle size, and impurity. Please Please contact us if necessary.