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Aluminum Nitride has the following main attributes
AlN remains stable at 2200 degrees C. Strength at room temperatures is good, but it decreases gradually with temperature. It is an excellent thermal shock material because it has a low thermal conductivity. Aluminum nitride is resistant to corrosion and ideal as a crucible for the casting of pure iron or aluminum. The potential electrical component aluminum nitride, which is an excellent electrical insulator that has good dielectric characteristics and also offers promising results as an electrochemical component, is aluminum nitride. An aluminum nitride layer on gallium arsenide protects it against ion implantation in annealing. Aluminium nitride also acts as a catalyst in the transformation of hexagonal to cubic boron nutride. At room temperature it reacts slow with water. Aluminum powder can be made in nitrogen atmosphere or ammonia at 8001000. It is white to gray-blue and easily synthesized. It can be produced by reaction of Al2O3C–N2 system at 1600 1750. The powder is off-white. Oder prepared using vapor-phase reactions of aluminum chloride, ammonia. It can be prepared using the AlCl3-NH3 vapor-phase method.
|Aluminum Nitride Properties|
|Other Titles||Aluminium nitride|
|Appearance||From white powder to pale yellow powder|
|Melting Point||2200 degC|
|Boiling Point||2517 degC (dec.)|
|Density||2.9% to 3.3 grams/cm3.|
|Solubility of H2O||N/A|
|Electrical Resistivity||10 to 12 10x 10x O.m|
|Poisson’s Rate||0.21 to $0.31|
|Specific Heat||780 J/kg-K|
|Thermo Conductivity||80 to 200 W/m/K|
|Thermal Expansion||4.2 to 5.4 um/mK|
|Young’s Module||330 GPa|
The majority of current research centers on developing a semiconductor light-emitting diode, either gallium nitride (or alloy aluminum galium nitride), that emits ultraviolet light having a wavelength of 250 nanometers. An inefficient diode may emit light up to 210nm (as reported by 1 May 2006). An aluminum nitride single crystal has an energy gap measuring by reflectance from ultraviolet rays. It has an energy value of 6.2eV. According to theory, this energy gap permits waves at wavelengths of around 200 nanometers to pass through. However, commercialization presents many problems. Optoelectronic engineering uses aluminum nitride as an optical layer, in optical storage interfaces and electronic substrates. Also, it is used to make chip carriers that have high thermal conductivity and military applications.
The properties of aluminum-nitride’s piezoelectric effects make epitaxial stretching crystals of aluminum nitride possible. This is used as a surface acousticwave detector. They are mounted on silicon wafers. It is difficult to produce thin films reliably in these locations.
Aluminum nitride clays can be used for heat exchangers and parts that require high temperatures.
It can be used in crucibles or casting materials to smelt Al, Cu, Ag and Pb by using aluminum nitride clays. This ceramic resists the corrosion of iron, aluminum, and other metals.
Aluminum Niitride’s main supplier
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