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Aluminum nitride (AIN) is a covalent-bond compound. It is an atomic-crystal, belongs to the diamond-like nitride system. AlN can stabilize up to 2200. The room temperature strength of AlN is very high. It decreases gradually with increasing temperature. It has a low thermal expansion and high thermal conductivity, which makes it an excellent thermal shock material. It has a high resistance to molten-metal corrosion, making it an ideal material for melting pure iron, aluminum and aluminum alloys. Aluminum nitride also has excellent dielectric properties. It is also a promising material for electrical components. The aluminum nitride layer on the gallium arsenide surface can protect it against ion implantation during annealing. Aluminum nitride also acts as a catalyst for the transformation of hexagonal boron to cubic boron. It is a slow reactant with water. The product can be synthesized by combining aluminum powder with ammonia and nitrogen at 8001000. The product is a white to grayish powder. If the Al2O3 system is used at 16001750 to synthesize the powder, it will be off-white.
A surface acoustic-wave detector also uses epitaxial stretching due to the piezoelectric effects of aluminum Nitride. The detector will then be mounted on a silicon-based wafer. The thin film can only be manufactured reliably in very few places.
Aluminium nitride is a ceramic material with a low expansion coefficient, good thermal conductivity, and high strength in high temperature. It can also be used to make heat exchangers for high-temperature structural components.
Aluminum nitride can resist the corrosion of metals, alloys, and iron, such as aluminum and iron. It can also be used to melt metals, such as Al. Cu. Ag. Pb.
Aluminum Nitride is widely used as a semiconductor electronic package due to its excellent properties in terms of electrical, mechanical and thermal properties.
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