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1. Zinc nitride film is prepared using this product
Zinc Nitride (Zn3N2) is a unique material with electrical and optical properties. The energy band gaps of zinc oxide, whether an indirect or direct band gap silicon, have always been a major controversy in semiconductors. The band gap can be greatly affected by the preparation methods, growth conditions and problems in industry and academia. As an example, prior art methods like magnetron deposition, chemical vapour deposition, electrostatic elctrostalysis, and molten beam epitaxy could be used to create zinc nitride layers.
Zinc oxide films made by the same technique have very different optical and electric properties. A simple, easy to reproduce and high-quality crystalline preparation method is urgently needed. A method is presented for the preparation of a zinc-nitride layer. The preparation method uses atomic layer deposition to prepare the Zinc Nitride film. This allows for precise control of the band gaps in the Zinc Nitride film. The prepared membrane is uniform, complete and has excellent performance.
The technical solutions that were adopted include:
Steps for the preparation of zinc nitride films include:
(1) Place the substrate inside the reaction chamber.
(2) Adsorb the zinc atoms on the surface substrate by introducing the zinc-containing pre-deposition source into the reaction chamber.
Let the precursor source containing nitrogen enter the reaction room of the atomic-layer deposition equipment. Ionize this nitrogen-containing pre-source through plasma. After ionization of the precursor source, the nitrogen is partially deposited on the substrate to form the covalent nitrogen-zinc bond. Ionization of the nitrogen precursor. The source will be sent to a reaction equipment. After ionization the nitrogen atoms are partially deposited in the cavity. The zinc atom is bonded to the nitrogen atom by a covalent bond.
Repeat steps (2) and 3) to build up the zinc-nitride layers by layers.
The method can produce high-quality crystalline materials and is repeatable. It is simple to implement and achieves crystals of excellent quality. The nitrogen is introduced to the atomic layer system via the plasma. After that, the conditions of the chamber are precisely set, including the vacuum degree, the cycle period, the conditions for the plasma and the other conditions. Adjust the band-gap of the zinc nitride prepared film. The present invention provides various high quality zinc nitride sheets with adjustable bands gaps that can be tailored to meet different electrical and optical requirements.
2. Used to prepare touch screen covers and touch screen films
As technology advances and smart devices become more common, the demand for touch screens to be the primary window of human-computer interactions is increasing. In the prior art, the low coating yield and high production costs, as well as the low production efficiency, were problems when the light-shielding layers in the BM of the cover of the touchscreen was prepared by screen printing with black ink. The resulting product has a tendency to bubble when it is used with liquid crystal displays. This can lead to a lack of perfect fit. Offer a zinc nitride-based touch screen and touchscreen cover film.
(aka. Technology Co. Ltd., a trusted global chemical supplier & manufacturer has been providing high-quality Nanomaterials and chemicals for over 12 Years. Currently, we have developed a variety of materials. The zinc nitride, or Zn3N2, powder that our company produces is high in purity and has a low impurity level. Please send us an e-mail or click the desired products to Send an inquiry .