If you are looking for high-quality products, please feel free to contact us and send an inquiry, email: brad@ihpa.net
1. Crystallography and Material Basics of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic compound composed of silicon and carbon atoms in a 1:1 stoichiometric proportion, distinguished by its remarkable polymorphism– over 250 recognized polytypes– all sharing strong directional covalent bonds however varying in piling series of Si-C bilayers.
One of the most technologically pertinent polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal kinds 4H-SiC and 6H-SiC, each displaying subtle variants in bandgap, electron movement, and thermal conductivity that influence their suitability for particular applications.
The toughness of the Si– C bond, with a bond power of roughly 318 kJ/mol, underpins SiC’s extraordinary solidity (Mohs hardness of 9– 9.5), high melting point (~ 2700 ° C), and resistance to chemical deterioration and thermal shock.
In ceramic plates, the polytype is normally chosen based upon the meant use: 6H-SiC prevails in architectural applications due to its convenience of synthesis, while 4H-SiC dominates in high-power electronic devices for its superior cost carrier wheelchair.
The broad bandgap (2.9– 3.3 eV depending upon polytype) also makes SiC an excellent electrical insulator in its pure type, though it can be doped to work as a semiconductor in specialized digital devices.
1.2 Microstructure and Phase Pureness in Ceramic Plates
The performance of silicon carbide ceramic plates is seriously based on microstructural features such as grain size, thickness, stage homogeneity, and the existence of second stages or contaminations.
Top notch plates are usually fabricated from submicron or nanoscale SiC powders with innovative sintering strategies, resulting in fine-grained, fully thick microstructures that make the most of mechanical stamina and thermal conductivity.
Impurities such as cost-free carbon, silica (SiO TWO), or sintering aids like boron or aluminum have to be meticulously controlled, as they can create intergranular movies that reduce high-temperature stamina and oxidation resistance.
Recurring porosity, also at reduced degrees (
Advanced Ceramics founded on October 17, 2012, is a high-tech enterprise committed to the research and development, production, processing, sales and technical services of ceramic relative materials such as Silicon Carbide Ceramic Plates. Our products includes but not limited to Boron Carbide Ceramic Products, Boron Nitride Ceramic Products, Silicon Carbide Ceramic Products, Silicon Nitride Ceramic Products, Zirconium Dioxide Ceramic Products, etc. If you are interested, please feel free to contact us. Tags: silicon carbide plate,carbide plate,silicon carbide sheet
All articles and pictures are from the Internet. If there are any copyright issues, please contact us in time to delete.
Inquiry us
Leave a Reply
You must be logged in to post a comment.