1. Product Scientific Research and Structural Stability

1.1 Crystal Chemistry and Bonding Characteristics

(Silicon Carbide Crucibles)

Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms arranged in a tetrahedral latticework, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing outstanding atomic bond strength.

The Si– C bond, with a bond power of approximately 318 kJ/mol, is among the toughest in structural ceramics, providing outstanding thermal stability, solidity, and resistance to chemical attack.

This robust covalent network leads to a material with a melting point going beyond 2700 ° C(sublimes), making it among the most refractory non-oxide porcelains offered for high-temperature applications.

Unlike oxide ceramics such as alumina, SiC keeps mechanical stamina and creep resistance at temperatures over 1400 ° C, where several metals and traditional porcelains start to soften or deteriorate.

Its low coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) allows fast thermal cycling without disastrous cracking, a crucial attribute for crucible performance.

These intrinsic residential properties originate from the well balanced electronegativity and similar atomic dimensions of silicon and carbon, which promote a very stable and largely packed crystal structure.

1.2 Microstructure and Mechanical Strength

Silicon carbide crucibles are normally fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a decisive function in durability and thermal shock resistance.

Sintered SiC crucibles are produced via solid-state or liquid-phase sintering at temperature levels over 2000 ° C, commonly with boron or carbon ingredients to boost densification and grain boundary communication.

This procedure yields a fully thick, fine-grained structure with very little porosity (

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